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2SD1656

2SD1656

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD1656 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SD1656 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1656 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A ICP Collector Current-Pulse 16 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1656 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V 8 tf Fall Time IC= 5A, IB1= 1A; IB2= -2A 0.4 μs isc Website:www.iscsemi.cn 2
2SD1656 价格&库存

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