2SD1663

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 3 A PC 80 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1663 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 50mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V IEBO Emitter Cutoff Current VEB= 7.7V; IC= 0 VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 1A; VCE= 5V 18 100 50 1.0 50 μA μA mA ICBO Collector Cutoff Current hFE DC Current Gain Switching times ton Turn-On Time 1.0 μs tstg Storage Time IC= 2.5A, IB1= 0.5A, IB2= -1A 3.0 μs tf Fall Time 0.5 μs hFE Classifications Q 18-34 P 18-50 isc Website：www.iscsemi.cn 2