Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ・With TO-220F package ・Complement to type 2SB1133 ・High reliability ・Wide area of safe operation APPLICATIONS ・For low-frequency and general-purpose amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SD1666
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -40~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector MAX 60 60 6 3 8 2 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=2A; IB=0.2A IC=0.5A ; VCE=5V VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V 70 20 MIN 60 60 6
2SD1666
TYP.
MAX
UNIT V V V
0.6 0.7
1.0 1.0 100 100 280
V V μA μA
60 8
pF MHz
hFE-1 Classifications Q 70-140 R 100-200 S 140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1666
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1666
4
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