2SD1677

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1677 DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High reliability ・Fast speed APPLICATIONS ・For TV horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 100 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 2.5 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1677 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.5 V μA μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=0.5A ; VCE=5V 8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1677 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3