2SD1680

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1680 DESCRIPTION ·With TO-3PFa package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 70 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 330 200 6 7 10 3 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1680 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 200 V V(BR)CBO VCEsat Collector-base breakdown voltage IC=1mA; IE=0 IC=5A; IB=0.5A 330 V Collector-emitter saturation voltage 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A VCE=330V; VBE=0 Ta=100℃ VEB=6V; IC=0 1.2 1 15 1 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=4V IC=5A IB1=0.8A,VEB=-5V,RB=0.5Ω 15 μs tf Fall time 0.75 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1680 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3