2SD1691

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1691 DESCRIPTION ・With TO-126 package ・Complement to type 2SB1151 ・Low saturation voltage ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA APPLICATIONS ・DC-DC converter ・Driver of solenoid or motor PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 5 8 1 1.3 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 ton tstg tf PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Turn-on time Storage time Fall time IC=2A; IB1=-IB2=0.2A RL=5.0Ω;VCC≈10V CONDITIONS IC=2.0A ;IB=0.2A IC=2.0A ;IB=0.2A VCB=50V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=1V IC=2A ; VCE=1V IC=5A ; VCE=1V 60 100 50 0.2 1.1 0.2 MIN TYP. 2SD1691 MAX 0.3 1.2 10 10 UNIT V V μA μA 400 1.0 2.5 1.0 μs μs μs hFE-2 Classifications M 100-200 L 160-320 K 200-400 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1691 Fig.2 Outline dimensions 3