2SD1692

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1692 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 100V(min.) ·DC Current Gain— : hFE = 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 APPLICATIONS ·Designed for general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 ±3 ±5 V IC ICM Collector Current-Continuous A Collector Current-Peak Collector Power Dissipation Ta=25℃ A 1.3 W PC Collector Power Dissipation TC=25℃ Ti Tstg Junction Temperature 15 150 ℃ ℃ Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1692 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; IB= 3mA, L= 1.0mH B 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 1.0 mA hFE-1 DC Current Gain IC= 1.5 A; VCE= 2V 2000 20000 hFE-2 DC Current Gain IC= 3 A; VCE= 2V 1000 Switching Times μs μs μs ton tstg tf Turn-on Time IC= 1.5A, IB1= -IB2= 1.5mA; RL= 27Ω; VCC≈ 40V 0.5 Storage Time 2.0 Fall Time 1.0 hFE-1 Classifications M 2000-5000 L 4000-12000 K 8000-20000 isc Website：www.iscsemi.cn