2SD1705

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1705 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max.)@ IC= 6A ·Complement to Type 2SB1154 APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ 20 A 70 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base -Emitter Saturation Voltage Base -Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 10mA; IB= 0 IC= 6A; IB= 0.3A B 2SD1705 MIN 80 TYP. MAX UNIT V 0.5 1.5 1.5 2.5 10 50 45 90 30 20 260 V V V V μA μA IC= 10A; IB= 1A IC= 6A; IB= 0.3A B IC= 10A; IB= 1A VCB= 100V; IE= 0 VEB= 5V; IC= 0 IC= 0.1A; VCE= 2V IC= 3A; VCE= 2V IC= 6A; VCE= 2V IC= 0.5A; VCE= 10V MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= 6A, IB1= -IB2= 0.6A; VCC= 50V 0.5 2.0 0.2 μs μs μs hFE-2Classifications Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2