2SD1711

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. ·Built-in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 5 100 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1711 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 800 V VCEsat VBEsat Collector-emitter saturation voltage IC=4.5A;IB=2 A IC=4.5A;IB=2 A 5.0 V Base-emitter saturation voltage 1.5 V IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA μA ICBO Collector cut-off current VCB=800V; IE=0 10 ICES Collector cut-off current VCE=1500V; RBE=0 1 mA hFE DC current gain IC=0.5 A ; VCE=5V 10 40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1711 Fig.2 Outline dimensions 3