2SD1714

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ 12 A 80 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1714 TYP. MAX UNIT VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V μA μA Collector Cutoff Current VCB= 140V; IE= 0 50 IEBO hFE-1 Emitter Cutoff Current VEB= 3V; IC= 0 IC= 20mA; VCE= 5V 20 50 DC Current Gain hFE-2 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-3 DC Current Gain IC= 5A; VCE= 5V 20 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 90 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 20 MHz hFE-2 Classifications Q 60-120 S 80-160 P 100-200 isc Website：www.iscsemi.cn 2