2SD1717

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1717 DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 12 20 3.5 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 120 150 -55~150 ℃ ℃ W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1717 MAX UNIT VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE ICBO Base-emitter voltage IC=8A ; VCE=5V VCB=160V; IE=0 1.8 V μA μA Collector cut-off current 50 IEBO Emitter cut-off current VEB=3V; IC=0 50 hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 200 hFE-3 DC current gain IC=8A ; VCE=5V 20 fT COB Transition frequency IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 MHz Collector output capacitance 210 pF hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1717 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3