2SD1732

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1732 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCES VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 1500 700 7 7 20 3 120 150 -55-150 UNIT V V V V A A A W ℃ ℃ PC Tj Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain CONDITIONS IE= 500mA; IC= 0 IC= 6A; IB= 1.4A B 2SD1732 MIN 7 TYP MAX UNIT V 8.0 1.5 5 25 10 1.0 2.3 2 V V IC= 6A; IB= 1.4A B IC= 1A; VCE= 5V VCB= 750V; IE= 0 μA mA V MHz ICBO Collector Cutoff Current VCB= 1500V; IE= 0 VECF fT C-E Diode Forward Voltage Transition Frequency IF= 7A IC= 1A; VCE= 10V Switching Times, Resistive Load ts tf Storage Time IC= 6A; IB1= 1.2A; IB2= -2.4A, VCC= 200V Fall Time 0.2 1.5 μs μs isc Website：www.iscsemi.cn