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2SD1732

2SD1732

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD1732 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD1732 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1732 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCES VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 1500 700 7 7 20 3 120 150 -55-150 UNIT V V V V A A A W ℃ ℃ PC Tj Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain CONDITIONS IE= 500mA; IC= 0 IC= 6A; IB= 1.4A B 2SD1732 MIN 7 TYP MAX UNIT V 8.0 1.5 5 25 10 1.0 2.3 2 V V IC= 6A; IB= 1.4A B IC= 1A; VCE= 5V VCB= 750V; IE= 0 μA mA V MHz ICBO Collector Cutoff Current VCB= 1500V; IE= 0 VECF fT C-E Diode Forward Voltage Transition Frequency IF= 7A IC= 1A; VCE= 10V Switching Times, Resistive Load ts tf Storage Time IC= 6A; IB1= 1.2A; IB2= -2.4A, VCC= 200V Fall Time 0.2 1.5 μs μs isc Website:www.iscsemi.cn
2SD1732
物料型号: - 型号:2SD1732

器件简介: - 2SD1732是一个高电压、高开关速度的NPN功率晶体管,内置阻尼二极管,具有广泛的安全工作区域。

引脚分配: - PIN 1: BASE(基极) - PIN 2: COLLECTOR(集电极) - PIN 3: EMITTER(发射极) - 封装:TO-3PN

参数特性: - 绝对最大额定值(Ta=25°C): - VCBO:Collector-Base Voltage(集电极-基极电压)1500V - VcES:Collector-Emitter Voltage(集电极-发射极电压)1500V - VCEO:Collector-Emitter Voltage(集电极-发射极电压)700V - VEBO:Emitter-Base Voltage(发射极-基极电压)7V - Ic:Collector Current-Continuous(集电极连续电流)7A - ICP:Collector Current-Peak(集电极峰值电流)20A - IB:Base Current- Continuous(基极连续电流)3A - Pc:Collector Power Dissipation @Tc=25°C(集电极功率耗散)120W - Ti:Junction Temperature(结温)150°C - Tstg:Storage Temperature Range(存储温度范围)-55-150°C

功能详解: - 2SD1732设计用于水平偏转输出应用,具有高电压、高开关速度和内置阻尼二极管的特点,提供了广泛的安全工作区域。

应用信息: - 该晶体管专为水平偏转输出应用设计。

封装信息: - 封装尺寸(单位:mm): - A: 19.90-20.10 - B: 15.50-15.70 - C: 4.70-4.90 - D: 0.90-1.10 - E: 1.90-2.10 - F: 3.40-3.60 - G: 2.90-3.10 - H: 3.20-3.40 - J: 0.595-0.605 - K: 20.50-20.70 - N: 10.89-10.91 - Q: 4.90-5.10 - R: 3.35-3.45 - S: 1.995-2.005 - U: 5.90-6.10 - Y: 9.90-10.10
2SD1732 价格&库存

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