2SD1735

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Peak 5 A IB B Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 0.6 A PC 60 W ℃ Tj 150 Tstg Storage Temperature Range -55-150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain CONDITIONS IE= 500mA; IC= 0 IC= 1A; IB= 0.4A B 2SD1735 MIN 7 TYP MAX UNIT V 8.0 1.5 6 30 10 1.0 2 V V IC= 1A; IB= 0.4A B IC= 0.5A; VCE= 5V VCB= 750V; IE= 0 μA mA MHz ICBO Collector Cutoff Current VCB= 1500V; IE= 0 fT Transition Frequency IC= 0.5A; VCE= 10V Switching Times, Resistive Load ts tf Storage Time IC= 1A; IB1= 0.3A; IB2= -0.6A, VCC= 200V Fall Time 0.2 1.0 μs μs isc Website：www.iscsemi.cn