2SD1738

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1738 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 15 A IB B Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 2 A PC 100 W ℃ Tj 150 Tstg Storage Temperature Range -55-150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1738 TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) VBE(sat) hFE Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 8.0 V Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.5 V DC Current Gain IC= 1A; VCE= 5V VCB= 750V; IE= 0 6 30 μA 10 ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1.0 mA fT Transition Frequency IC= 1A; VCE= 10V 2 MHz Switching Times, Resistive Load μs μs ts tf Storage Time IC= 4A; IB1= 0.8A; IB2= -1.6A, VCC= 200V Fall Time 1.5 0.2 isc Website：www.iscsemi.cn