2SD1756

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1756 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 170V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage high current amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 15 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICEO hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain CONDITIONS IC= 5A; L= 5mH IC= 25mA; RBE= ∞ IE= 50mA; IC= 0 IC= 5A; IB= 10mA B 2SD1756 MIN 170 200 7 TYP. MAX UNIT V V V 1.5 3.5 2.0 4.0 500 1500 V V V V μA IC= 10A; IB= 100mA IC= 5A; IB= 10mA B IC= 10A; IB= 100mA VCE= 180V; RBE= ∞ IC= 5A; VCE= 3V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A, IB1= -IB2= 10mA; VCC= 30V 0.9 8.0 3.5 μs μs μs isc Website：www.iscsemi.cn 2