2SD1762

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1762 DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SB1185 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 60 50 5 3 4.5 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50μA , IE=0 IE=50μA , IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=40V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=-0.5A ; VCE=5V;f=30MHz IE=0 ; VCB=10V ,f=1MHz 60 90 40 MIN 50 60 5 2SD1762 TYP. MAX UNIT V V V 1.0 1.5 1 1 320 V V μA μA MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1762 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3