2SD1763

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1763 DESCRIPTION ・With TO-220Fa package ・High breakdown voltage VCEO ・Complement to type 2SB1186 ・High transition frequency APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 2 3 20 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50μA , IE=0 IE=50μA , IC=0 IC=1A ;IB=0.1A IC=1A ;IB=0.1A VCB=100V IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IE=-0.1A ; VCE=5V IE=0 ; VCB=10V ,f=1MHz 100 80 20 MIN 120 120 5 2SD1763 TYP. MAX UNIT V V V 0.4 1.5 1 1 320 V V μA μA MHz pF hFE Classifications E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1763 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3