2SD1765

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1765 DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 6 2 3 20 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1765 TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50μA; IC=0 100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=1mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=1A ; VCE=2V 1000 10000 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 25 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1765 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3