2SD1769

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1769 DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 3A APPLICATIONS ·Designed for solenoid driver, relay and motor, series regulator, and general purpose applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range VALUE 120 120 6 6 10 1 50 150 -55~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1769 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 120 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 3A ,IB= 3mA 1.5 V Base-Emitter Saturation Voltage IC= 3A ,IB= 3mA 2.0 V μA Collector Cutoff Current VCB= 120V, IE= 0 VEB= 6V; IC= 0 10 Emitter Cutoff Current 20 mA hFE DC Current Gain IC= 3A ; VCE= 2V 2000 fT Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 100 MHz Switching Times μs μs μs ton tstg tf Turn-on Time IC= 3A ,RL= 10Ω, IB1= -IB2= 3mA,VCC= 30V 0.5 Storage Time 5.5 Fall Time 1.5 isc Website：www.iscsemi.cn