2SD1770

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1770 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1190 APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ 2 A 25 W PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.4 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1770 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 6 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V Base-Emitter On Voltage IC= 0.3A; VCE= 10V VCB= 200V; IE= 0 1.0 V μA μA Collector Cutoff Current 50 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 50 hFE-1 DC Current Gain IC= 0.1A; VCE= 10V 60 240 hFE-2 DC Current Gain IC= 0.3A; VCE= 10V 50 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 20 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest=1MHz 27 pF hFE-1 Classifications Q 60-140 P 100-240 isc Website：www.iscsemi.cn 2