2SD1772

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB1192/1192A ・Large collector power dissipation APPLICATIONS ・For power amplification ・For TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ・ ABSOLUTE MAXIMUM RATINGS AT Ta=25℃ SYMBOL VCBO PARAMETER Collector-base voltage 2SD1772 VCEO Collector-emitter voltage 2SD1772A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 180 6 1 2 25 w V A A CONDITIONS Open emitter VALUE 200 150 V UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1772 V(BR)CEO Collector-emitter breakdown voltage 2SD1772A V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=0.5mA , IC=0 IC=500mA ;IB=50mA IC=300mA ; VCE=10V VCB=200V; IE=0 VEB=4V; IC=0 IC=100mA ; VCE=10V IC=300mA ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=5mA , IB=0 CONDITIONS 2SD1772 2SD1772A MIN 150 TYP. MAX UNIT V 180 6 1.0 1.0 50 50 60 50 27 20 pF MHz 240 V V V μA μA IC=100mA ; VCE=10V;f=1MHz hFE-1 Classifications Q 60-140 P 100-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1772 2SD1772A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A 4