2SD1773

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1773 DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1193 ・High speed switching APPLICATIONS ・For medium speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 50 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 7 8 12 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1773 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=2A , L=10mH 120 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=4A ;IB=8mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=8A ;IB=80mA 3.5 V ICBO Collector cut-off current VCB=120V ;IE=0 100 μA ICEO Collector cut-off current VCE=100V ;IB=0 10 μA hFE DC current gain IC=4A ; VCE=3V 1000 20000 fT Transition frequency IC=0.5A ; VCE=10V,f=1MHz 20 MHz Switching times ton Turn-on time IC=4A ;IB1=8mA IB2=-8mA; VCC=50V 0.7 μs ts Storage time 6.0 μs tf Fall time 2.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1773 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3