2SD1778

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1778 DESCRIPTION ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1334 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature 6 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1778 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 IE= 50μA; IC= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V μA μA Collector Cutoff Current VCB= 60V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 hFE DC Current Gain IC= 1A; VCE= 5V 60 320 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 90 pF fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V 8 MHz hFE Classifications D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2