2SD1785

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1785 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to Type 2SB1258 APPLICATIONS ·Driver for solenoid, relay and motor, series regulator, and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 120 120 6 6 10 1 30 150 -55~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1785 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= 2A; IB= 3mA B 1.5 V μA Collector Cutoff Current VCB= 120V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A; VCE= 2V 2000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz IE= 0.1A; VCE= 12V 70 pF fT Current-Gain—Bandwidth Product 100 MHz Switching times μs μs μs ton Turn-on Time IC= 3A; IB1= -IB2= 3mA; VCC= 30V; RL= 10Ω 0.5 tstg Storage Time 5.5 tf Fall Time 1.5 isc Website：www.iscsemi.cn 2