2SD1788

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1788 DESCRIPTION ・With ITO-220 package ・Switching power transistor ・DARLINGTON PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 ±4 ±6 0.3 0.5 25 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1788 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1A; IB=2mA IC=1A; IB=2mA VCB=100V; IE=0 VCE=100V; IB=0 VEB=7V; IC=0 IC=1A ; VCE=3V IC=0.4A ; VCE=10V 1500 20 MIN TYP. MAX 1.5 2.0 0.1 0.1 5 30000 MHz UNIT V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=1A;IB1=IB2=2mA, RL=25Ω;VBB2=4V 2.0 12 5.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1788 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3