2SD1791

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1791 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min.) ·High Switching Speed APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCEO VCBO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continunous Collector Current-Peak Base Current-Continunous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 100 100 7 7 10 0.5 1.0 30 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 4.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1791 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 5mA B 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 100V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5 mA hFE DC Current Gain IC= 3A, VCE= 3V 1500 30000 fT Current-Gain—Bandwidth Product IC= 0.7A; VCE= 10V 20 MHz Switching Times; Resistive Load ton ts tf Turn-On Time Storage Time Fall Time IC= 3A; IB1= -IB2= 5mA VBB2= 4V; RL= 10Ω 2 12 5 μs μs μs isc Website：www.iscsemi.cn