2SD1795

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 12 10 15 0.5 1.0 50 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=7A; IB=70mA IC=7A; IB=70mA VCB=500V; IE=0 VCE=400V; IB=0 VEB=12V; IC=0 IC=7A ; VCE=2V IC=1A ; VCE=10V 150 10 MIN 400 2SD1795 TYP. MAX UNIT V 1.5 2.0 0.1 0.1 100 V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;IB1=IB2=70mA, RL=10Ω;VBB2=4V 2.0 15 15 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1795 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3