2SD1825

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1223 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・For use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1825 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 70 60 6 4 6 20 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1825 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5mA; IE=0 IC=50mA; RBE=∞ IC=2A ; IB=4mA IC=2A ; IB=4mA VCB=40V;IE=0 VEB=5V;IC=0 IC=2A ; VCE=2V IC=2A ; VCE=5V 2000 5000 20 MHz MIN 70 60 1.5 2.0 0.1 3.0 TYP. MAX UNIT V V V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=2A; IB1=-IB2=4mA VCC=20V ,RL=10Ω 0.6 2.7 1.6 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1825 Fig.2 Outline dimensions 3