2SD1827

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1225 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in cotrol of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1827 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 70 60 6 10 15 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1827 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA; IE=0 IC=50mA; RBE=∞ IC=5A ; IB=10mA IC=5A ; IB=10mA VCB=40V;IE=0 VEB=5V;IC=0 IC=5A ; VCE=2V 2000 5000 MIN 70 60 0.9 1.5 2.0 0.1 3.0 TYP. MAX UNIT V V V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4Ω 0.6 3.0 1.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1827 Fig.2 Outline dimensions 3