2SD1830

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1228 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1830 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 8 12 20 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1830 TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 IC=50mA; RBE=∞ IC=4A ; IB=8mA 110 V V(BR)CEO VCEsat Collector-emitter breakdown voltage 100 V Collector-emitter saturation voltage 0.9 1.5 V VBEsat Base-emitter saturation voltage IC=4A ; IB=8mA 2.0 V ICBO Collector cut-off current VCB=80V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 3.0 mA hFE DC current gain IC=4A ; VCE=3V 1500 4000 fT Transition frequency IC=4A ; VCE=5V 20 MHz Switching times μs μs μs ton Turn-on time IC=500IB1=-500IB2=4A VCC=50V ,RL=12.5Ω 0.6 tstg Storage time 4.8 tf Fall time 1.6 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1830 Fig.2 Outline dimensions 3