2SD1841

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1841 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB1231 APPLICATIONS ·Designed for motor drivers, relay drivers, converters and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE 110 100 6 25 40 8 3 UNIT V V V A A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 120 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1841 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.8 V VBE(sat) ICBO Base -Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V μA μA Collector Cutoff Current VCB= 100V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 hFE-1 DC Current Gain IC= 2.5A; VCE= 2V 50 140 hFE-2 DC Current Gain IC= 10A; VCE= 2V 20 hFE-1 Classifications P 50-100 Q 70-140 isc Website：www.iscsemi.cn 2