2SD1847

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1847 DESCRIPTION ·Collector-Base Breakdown Voltage: VCBO= 1500V (Min.) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 7 V IC ICM Collector Current-Continuous 5 A Collector Current-Peak 15 A IB B Base Current- Continuous Collector Power Dissipation @ Ta=25℃ 2 A 3 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 100 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1847 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.5 10 1.0 5 25 V μA mA ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 1A; VCE= 5V hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 4A; VCE= 10V 4 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 2 MHz VECF C-E Diode Forward Voltage IF= 5A 2.3 V Switching times, Resistive Load μs μs tstg tf Storage Time IC= 4A; IB1= 1A; IB2= -2A; VCC= 200V Fall Time 1.5 0.2 isc Website：www.iscsemi.cn 2