2SD1855

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1855 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB1335 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 60 6 4 30 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA; IB=0 IC=50μA; IE=0 IE=50μA; IC=0 IC=3A ;IB=0.3A IC=3A ;IB=0.3A VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IC=0.5A; VCE=5V f=1MHz ; VCB=10V 60 8 90 MIN 60 80 6 2SD1855 TYP. MAX UNIT V V V 1.0 1.5 10 10 320 V V μA μA MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1855 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3