2SD1877

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Buitl-in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SD1877 · Fig.1 simplified outline (TO-3PML) and symbol Emitter Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 4 12 50 150 -55~150 UNIT V V V A A W ℃ ℃ 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1877 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 VF tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Fall time CONDITIONS IC=100mA; IB=0 IC=2.5A;IB=0.8A IC=2.5A;IB=0.8A VCB=800V; IE=0 VCB=1500V; RBE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=2.5A ; VCE=5V IEC=4A IC=3A;RL=50Ω IB1=0.8A;IB2=-1.6A;VCC=200V 0.1 40 8 3.5 7 2.0 0.3 V μs MIN 800 5 1.5 10 1.0 130 TYP. MAX UNIT V V V μA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1877 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1877 4