2SD1879

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability ・Built in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SD1879 Fig.1 simplified outline (TO-3PML) and symbol Emitter Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 20 60 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1879 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO ICES hFE-1 hFE-2 VF tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Collector cut-off current DC current gain DC current gain Diode forward voltage Fall time CONDITIONS IC=100mA ;IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V ;IE=0 VEB=4V ;IC=0 VCE=1500V IC=1A ; VCE=5V IC=5A ; VCE=5V IEC=6A ;IB=0 IC=4A;RL=50Ω; VCC=200V IB1=0.8A;- IB2=1.6A 0.1 8 5 10 2 0.3 V μs 40 MIN 800 5 1.5 10 130 1.0 TYP. MAX UNIT V V V μA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1879 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1879 4