2SD1880

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability ・Built in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SD1880 Fig.1 simplified outline (TO-3PML) and symbol Emitter Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 30 70 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1880 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO ICES hFE-1 hFE-2 VF tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Collector cut-off current DC current gain DC current gain Diode forward voltage Fall time CONDITIONS IC=100mA ;IB=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=800V ;IE=0 VEB=4V ;IC=0 VCE=1500V IC=1A ; VCE=5V IC=6A ; VCE=5V IEC=8A IC=6A;RL=33.3Ω IB1=1.2A IB2=-2.4A;VCC=200V 0.1 8 5 10 2 0.3 V μs 40 MIN 800 5 1.5 10 130 1.0 TYP. MAX UNIT V V V μA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1880 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1880 4