2SD1882

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High reliability. ・High speed APPLICATIONS ・Color TV horizontal deflection output. ・Color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1882 Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 3 12 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1882 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2A;IB=0.6 A 5.0 V VBEsat VCEO(SUS) Base-emitter saturation voltage IC=2A;IB=0.6 A IC=100mA;IB=0 800 1.5 V Collector-emitter sustaining voltage V IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA μA ICBO Collector cut-off current VCB=800V; IE=0 10 ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA hFE-1 DC current gain IC=0.5 A ; VCE=5V 8 hFE-2 tf DC current gain IC=2A ; VCE=5V IC=3A;RL=66.7Ω; IB1=0.8A IB2=-1.6A;VCC=200V 3 6 μs Fall time 0.1 0.3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1882 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1882 4