Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1888
DESCRIPTION ・With TO-220C package ・DARLINGTON ・Complement to type 2SB1339 ・High DC current gain APPLICATIONS ・Low frequency power amplification
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 6 6 10 40 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1888
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50μA; IE=0 MIN TYP. MAX UNIT
V(BR)CBO
Collector-base breakdown voltage
120
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA;IB=0
120
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V μA
ICBO
Collector cut-off current
VCB=120V; IE=0
100
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=2A ; VCE=3V
2000
20000
fT
Transition frequency
IE=-0.2A ; VCE=5V;f=10MHz
40
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1888
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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