2SD1888

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1888 DESCRIPTION ・With TO-220C package ・DARLINGTON ・Complement to type 2SB1339 ・High DC current gain APPLICATIONS ・Low frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 6 6 10 40 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1888 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50μA; IE=0 MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage 120 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V μA ICBO Collector cut-off current VCB=120V; IE=0 100 IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V 2000 20000 fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1888 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3