2SD1892

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1892 DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low collector saturation voltage ・DARLINGTON ・Complement to type 2SB1252 APPLICATIONS ・Power amplification ・Optimum for 35W high-fidelity output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 5 8 45 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=4A ;IB=4mA IC=4A ;IB=4mA VCB=120V; IE=0 VCE=100V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 20 MIN 100 TYP. 2SD1892 MAX UNIT V 2.5 3.0 100 100 100 V V μA μA μA 30000 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=4A; VCC=50V IB1=-IB2=4mA 2.5 3.5 1.0 μs μs μs hFE-2 Classifications Q 5000-15000 P 8000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1892 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3