2SD1894

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1894 DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS ・Power amplification ・Optimum for 60W high-fidelity output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 160 140 5 7 12 70 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=6A ;IB=6mA IC=6A ;IB=6mA VCB=160V; IE=0 VCE=140V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 20 MIN 140 TYP. 2SD1894 MAX UNIT V 2.5 3.0 100 100 100 V V μA μA μA 30000 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=6A; VCC=50V IB1=-IB2=6mA 2.5 5.0 2.5 μs μs μs hFE-2 Classifications Q 5000-15000 P 8000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1894 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3