2SD1897

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1897 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High power dissipation:PC=30W@TC=25℃ APPLICATIONS ·For low frequency power amplifier,power driver and DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 10 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50μA , IE=0 IE=50μA , IC=0 IC=3A ;IB=0.3A IC=3A ;IB=0.3A VCB=100V IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=-0.5A ; VCE=5V;f=5MHz IE=0 ; VCB=10V ,f=1MHz 60 8 100 MIN 100 100 5 2SD1897 TYP. MAX UNIT V V V 1.0 1.5 10 10 320 V V μA μA MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1897 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3