2SD1910

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1910 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 3 6 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1910 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 600 V VCE(sat) Collector-emitter saturation voltage IC=2.5A ; IB=0.8A 5.0 V VBE(sat) Base-emitter saturation voltage IC=2.5A ; IB=0.8A 1.5 V μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=6V; IC=0 50 200 mA hFE DC current gain IC=0.5A ; VCE=5V 8 25 VF Diode forward voltage IF=3A 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1910 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3