2SD1933

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 7 4 6 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50μA; IE=0 MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage 80 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=4mA 1.5 V μA ICBO Collector cut-off current VCB=80V; IE=0 100 IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V 1000 10000 fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1933 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3