2SD1940

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1940 DESCRIPTION ·With TO-220F package ·Wide area of safe operation APPLICATIONS ·85V/6A, AF 25 to 30W output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS MAX 100 85 6 6 10 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE=∞ IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 60 20 15 110 MIN 85 100 6 TYP. 2SD1940 MAX UNIT V V V 2.0 1.5 0.1 0.1 320 V V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=0.5A; IB1=-IB2=50mA VCC=20V ,RL=40Ω 0.28 3.60 0.50 μs μs μs hFE-1 Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1940 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1940 4