2SD1985

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD1985 2SD1985A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD1985 VCBO Collector-base voltage 2SD1985A 2SD1985 VCEO Collector-emitter voltage 2SD1985A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 80 6 3 5 25 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1985 IC=30mA , IB=0 2SD1985A IC=3A;IB=0.375A VCE=4V;IC=3A 2SD1985 2SD1985A 2SD1985 2SD1985A VCE=60V;IB=0 200 VCE=80V;IB=0 VCE=30V;IB=0 300 VCE=60V;IB=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A; VCE=5V;f=10MHz 70 10 30 MHz 1 250 mA μA μA 80 1.2 1.8 V V CONDITIONS MIN 60 V TYP. MAX UNIT VCEO Collector-emitter breakdown voltage VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage ICES Collector cut-off current ICEO Collector cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton ts tf Turn-on time Storage time Fall time IC=1A ;IB1=0.1A IB2=-0.1A;VCC=50V 0.5 2.5 0.4 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A 4