2SD200

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD200 DESCRIPTION ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=90℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 600 6 2.5 10 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 B 2SD200 MIN 600 6 TYP. MAX UNIT V V IE=1mA; IC=0 IC=2A; IB=0.6A IC=2A; IB=0.6A VCB=500V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=2A ; VCE=5V 8.0 1.5 10 100 8 2.5 V V μA μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD200 Fig.2 Outline dimensions 3