2SD2015

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2015 DESCRIPTION ・With TO-220F package ・DARLINGTON APPLICATIONS ・Driver for solenoid,relay and motor and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 120 6 4 0.5 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2A ;IB=2mA IC=2A ;IB=2mA VCB=150V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=2V IC=0.1A ; VCE=12V f=1MHz;VCB=10V 2000 40 40 MIN 120 2SD2015 TYP. MAX UNIT V 1.5 2.0 10 10 V V μA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A IB1=-IB2=10mA VCC=40V ,RL=20Ω 0.6 5.0 2.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2015 Fig.2 Outline dimensions 3