INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2016
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V
APPLICATIONS ·Igniter, relay and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
0.5
A
PC
25
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD2016
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
200
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 1.5mA
B
1.5
V
VBE(sat) ICBO
Base-Emitter Saturation Voltage
IC= 1A; IB= 1.5mA
B
2.0
V μA
Collector Cutoff Current
VCB= 200V; IE= 0
10
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10
mA
hFE
DC Current Gain
IC= 1A; VCE= 4V
1000
15000
fT
Current-Gain—Bandwidth Product
IE= -0.1A; VCE= 12V
90
MHz
COB
Output Capacitance
VCB= 10V, ftest= 1MHz
40
pF
isc Website:www.iscsemi.cn
2
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