2SD2024

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2024 DESCRIPTION ・With TO-220C package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 10 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2024 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=50μA; IE=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V 1000 20000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2024 Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3