2SD2027

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC ICM Collector Current-Continuous 3 A Collector Current-Peak Collector Power Dissipation @Ta=25℃ 8 A 1.75 W PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature 30 150 ℃ ℃ Storage Temperature -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 5mA; RBE= ∞ IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 2A; IB= 0.2A B 2SD2027 MIN 60 60 6 TYP. MAX UNIT V V V 1.0 1.0 100 100 70 20 60 8 280 V V μA μA IC= 0.5A; VCE= 5V VCB= 40V; IE=0 VEB= 4V; IC=0 IC= 0.5A; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V, f= 1MHz IC= 0.5A ; VCE= 5V pF MHz hFE-1 Classifications Q 70-140 R 100-200 S 140-280 isc Website：www.iscsemi.cn 2